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BAS21 Scheda tecnica(PDF) 2 Page - General Semiconductor |
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BAS21 Scheda tecnica(HTML) 2 Page - General Semiconductor |
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2 / 3 page ![]() ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BAS19, BAS20, BAS21 Symbol Min. Typ. Max. Unit Forward Voltage at IF = 100 mA at IF = 200 mA VF VF – – – – 1.0 1.25 V V Leakage Current at VR = VRmax at VR = VRmax; Tj = 150 °C IR IR – – – – 100 100 nA µA Dynamic Forward Resistance at IF = 10 mA rf –5– Ω Capacitance at VR = 0, f = 1 MHz Ctot ––5pF Reverse Recovery Time (see figures) from IF = 30 mA through IR = 30 mA to IR = 3 mA, RL = 100 Ω trr ––50 ns Thermal Resistance Junction to Ambient Air RthJA – – 4302) K/W 2) Device on fiberglass substrate, see layout. Layout for RthJA test Thickness: Fiberglass 0.059 in (1.5 mm) Copper leads 0.012 in (0.3 mm) .59 (15) 0.2 (5) .03 (0.8) .30 (7.5) .12 (3) .04 (1) .06 (1.5) .20 (5.1) .08 (2) .08 (2) .04 (1) Dimensions in inches (millimeters) .47 (12) |
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