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DF10M Scheda tecnica(PDF) 1 Page - General Semiconductor

Il numero della parte DF10M
Spiegazioni elettronici  MINIATURE GLASS PASSIVATED SINGLE-PHASE-BRIDGE RECTIFIER
PDF  2 Pages
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Produttore elettronici  GE [General Semiconductor]
Homepage  http://www.vishay.com
Logo GE - General Semiconductor

DF10M Scheda tecnica(HTML) 1 Page - General Semiconductor

  DF10M Datasheet HTML 1Page - General Semiconductor DF10M Datasheet HTML 2Page - General Semiconductor  
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DF005M THRU DF10M
MINIATURE GLASS PASSIVATED SINGLE-PHASE-BRIDGE RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
FEATURES
♦ This series is UL listed under the Recognized Component
Index, file number E54214
♦ Plastic package used has Underwriters Laboratory
Flammability Classification 94V-0
♦ Glass passivated chip junctions
♦ Surge overload rating of 50 Amperes peak
♦ Ideal for printed circuit boards
♦ High temperature soldering guaranteed:
260°C/10 seconds at 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: Molded plastic body over passivated junctions
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on body
Mounting Position: Any
Weight: 0.04 ounce, 1.0 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
DF
DF
DF
DF
DF
DF
DF
SYMBOLS
005M
01M
02M
04M
06M
08M
10M
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
Volts
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
Volts
Maximum average forward output rectified current
at TA=40°C
I(AV)
1.0
Amp
Peak forward surge current single sine-wave
superimposed on rated load (JEDEC Method)
IFSM
50.0
Amps
Rating for fusing (t < 8.3ms)
I2t
10.0
A2sec
Maximum instantaneous forward voltage drop
per leg at 1.0A
VF
1.1
Volts
Maximum reverse current
TA=25°C
5.0
at rated DC blocking voltage per leg
TA=125°C
IR
500.0
µA
Typical junction capacitance per leg (NOTE 1)
CJ
25.0
pF
Typical thermal resistance per leg (NOTE 2)
R
ΘJA
40.0
R
ΘJL
15.0
°C/W
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.5 x 0.5" (13 x 13mm) copper pads
Case Style DFM
Dimensions in inches and (millimeters)
0.315 (8.00)
0.285 (7.24)
0.013 (3.3)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
0.255 (6.5)
0.245 (6.2)
0.335 (8.51)
0.320 (8.12)
0.045 (1.14)
0.035 (0.89)
0.080 (2.03)
0.050 (1.27)
0.023 (0.58)
0.018 (0.46)
0.185 (4.69)
0.150 (3.81)
0.130 (3.3)
0.120 (3.05)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)


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