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IXFX32N90P Scheda tecnica(PDF) 2 Page - IXYS Corporation

Il numero della parte IXFX32N90P
Spiegazioni elettronici  N-Channel Enhancement Mode
PDF  5 Pages
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Produttore elettronici  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFX32N90P Scheda tecnica(HTML) 2 Page - IXYS Corporation

  IXFX32N90P Datasheet HTML 1Page - IXYS Corporation IXFX32N90P Datasheet HTML 2Page - IXYS Corporation IXFX32N90P Datasheet HTML 3Page - IXYS Corporation IXFX32N90P Datasheet HTML 4Page - IXYS Corporation IXFX32N90P Datasheet HTML 5Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK32N90P
IXFX32N90P
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Note:
1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
V
DS = 20V, ID = 0.5 • ID25, Note 1
13
22
S
C
iss
10.6
nF
C
oss
V
GS = 0V, VDS = 25V, f = 1MHz
750
pF
C
rss
140
pF
R
Gi
Gate Input Resistance
1.1
Ω
t
d(on)
48
ns
t
r
80
ns
t
d(off)
68
ns
t
f
26
ns
Q
g(on)
215
nC
Q
gs
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
80
nC
Q
gd
98
nC
R
thJC
0.13
°C/W
R
thCS
0.15
°C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
I
S
V
GS = 0V
32
A
I
SM
Repetitive, Pulse Width Limited by T
JM
128
A
V
SD
I
F = IS, VGS = 0V, Note 1
1.5
V
t
rr
300 ns
Q
RM
1.9
μC
I
RM
14
A
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
R
G = 1Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
TO-264 Outline
PLUS247TM Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
I
F = 16A, -di/dt = 100A/μs
V
R = 100V, VGS = 0V



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