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BUV21 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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BUV21 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUV21 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0;L=25mH 200 V V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=12 A;IB=1.2A 0.6 V VCEsat-2 Collector-emitter saturation voltage IC=25 A;IB=3A 1.5 V VBEsat Base-emitter saturation voltage IC=25A;IB=3A 1.5 V ICEX Collector cut-off current VCE=250V;VBE=-1.5V TC=125 3.0 12 mA ICEO Collector cut-off current VCE=160V;IB=0 3.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=12A ; VCE=2V 20 60 hFE-2 DC current gain IC=25A ; VCE=4V 10 fT Transition frequency IC=2A ; VCE=15V; f=4MHz 8.0 MHz Switching times ton Turn-on time 1.0 µs ts Storage time 1.8 µs tf Fall time IC=25A ;IB1=-IB2=3A VCC=100V ;RC=4E 0.4 µs |
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