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STB21NK50Z Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB21NK50Z
Spiegazioni elettronici  N-channel 500 V, 0.23 Ω, 17 A, D2PAK Zener-protected superMESH™ Power MOSFET
PDF  13 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB21NK50Z Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB21NK50Z
Electrical ratings
3/13
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
17
A
ID
Drain current (continuous) at TC=100 °C
10.71
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
68
A
PTOT
Total dissipation at TC = 25 °C
190
W
Derating Factor
1.51
W/°C
Vesd(G-S)
G-S ESD (HBM C=100 pF, R=1.5 k
Ω)
6000
V
dv/dt(2)
2.
ISD ≤ 17 A, di/dt ≤ 200 A/µs,VDD ≤ V(BR)DSS, TJ ≤ TJMAX
Peak diode recovery voltage slope
4.5
V/ns
Tstg
Storage temperature
-55 to 150
°C
TJ
Max operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.66
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
17
A
EAS
Single pulse avalanche energy
(starting TJ=25 °C, ID=IAR, VDD=50 V)
850
mJ



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