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2SC535 Scheda tecnica(PDF) 8 Page - Hitachi Semiconductor |
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2SC535 Scheda tecnica(HTML) 8 Page - Hitachi Semiconductor |
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8 / 12 page ![]() 2SC535 8 Reverse Transfer Admittance Characteristics f = 50 MHz 70 100 150 200 IC = 5 mA 3 2 1 –1.0 –0.8 –0.6 –0.4 –0.2 0 –0.04 –0.16 –0.12 –0.08 Reverse Transfer Conductance gre (mS) yre = gre + jbre VCE = 6 V –0.20 Forward Transfer Admittance Characteristics –120 –100 –80 –60 –40 –20 IC = 1 mA 2 mA 3 mA 5 mA 200 150 100 70 020 60 40 80 120 100 Forward Transfer Conductance gfe (mS) f = 50 MHz yfe = gfe + jbfe VCE = 6 V Output Admittance Characteristics Output Conductance goe (mS) yoe = goe + jboe VCE = 6 V IC = 1 mA 23 5 2.4 2.0 1.6 1.2 0.8 0.4 0 0.1 0.6 0.4 0.3 0.2 0.5 150 100 70 50 f = 200 MHz Input Admittance vs. Collector to Emitter Voltage Collector to Emitter Voltage VCE (V) 10 5 2 1.0 0.5 15 20 210 yie = gie + jbie IC = 1 mA f = 100 MHz bie gie |
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