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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

FEATURES 

DIRECT REPLACEMENT FOR INTERSIL LS3N191 

LOW GATE LEAKAGE CURRENT 

LOW TRANSFER CAPACITANCE 

ABSOLUTE MAXIMUM RATINGS

Maximum Temperatures 

Storage Temperature ‐65°C to +150°C 

Operating Junction Temperature ‐55°C to +135°C 

Maximum Power Dissipation 

Continuous Power Dissipation (one side) 

300mW 

Continuous Power Dissipation (one side)

525mW 

MAXIMUM CURRENT

Drain to Source

50mA 

MAXIMUM VOLTAGES 

Drain to Gate or Drain to Source

Transient Gate to Source

2,3

±125V 

Gate‐Gate Voltage 

±80V 

LS3N191 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

CHARACTERISTIC 

MIN 

TYP. 

MAX 

UNITS 

CONDITIONS 

Drain to Source Breakdown Voltage ‐40 

‐‐ 

‐‐ 

 

 

V 

Source to Drain Breakdown Voltage ‐40 

‐‐ 

‐‐ 

Gate to Source Voltage ‐3.0 

‐‐ 

‐6.5 

Gate to Source Threshold Voltage ‐2.0 

‐‐ 

‐5.0 

‐2.0 

‐‐ 

‐5.0 

Gate Reverse Leakage Current 

‐‐ 

‐‐ 

10  

 

pA 

Forward Gate Leakage Current 

‐‐ 

‐‐ 

‐10 

VGS = ‐40V 

Drain to Source Leakage Current 

‐‐ 

‐‐ 

‐200 

VDS = ‐15V 

Source to Drain Leakage Current 

‐‐ 

‐‐ 

‐400 

VSD = ‐15V  VDB = 0 

Drain Current “On” ‐5.0 

‐‐ 

‐30 

mA 

VDS = ‐15V,  VGS = ‐10V 

Drain to Source “On” Resistance 

‐‐ 

‐‐ 

300 Ω 

VDS = ‐20V,   ID = ‐100µA 

Forward Transconductance

4 

1500 

‐‐ 

4000 

µS 

VDS = ‐15V,    ID = ‐5mA ,   f = 1kHz 

Output Admittance 

‐‐ 

‐‐ 

300 

‐‐ 

‐‐ 

4.5  

pF 

 

Reverse Transfer Capacitance 

‐‐ 

‐‐ 

1.0 

Output Capacitance 

‐‐ 

‐‐ 

3.0 

MATCHING CHARACTERISTICS LS3N191                                                                                                                                      

SYMBOL 

CHARACTERISTIC 

LIMITS  

UNITS 

 

CONDITIONS 

MIN 

MAX 

Forward Transconductance Ratio 

0.85 

1.0 

ns 

Gate Source Threshold Voltage 

Differential

‐‐ 

100 

mV 

Gate Source Threshold Voltage 

Differential Change with Temperature

 

‐‐ 

 

100 

 

µV/°C 

SWITCHING CHARACTERISTICS   

SYMBOL 

CHARACTERISTIC 

MIN 

TYP 

MAX 

UNITS 

CONDITIONS 

Turn On Delay Time 

‐‐ 

‐‐ 

15 

 

ns 

 

Turn On Rise Time 

‐‐ 

‐‐ 

30 

Turn Off Time 

‐‐ 

‐‐ 

50 

The LS3N191 is a monolithic dual enhancement mode P-Channel Mosfet

LS3N191

P-CHANNEL MOSFET

The LS3N191 is a dual enhancement mode P-Channel

Mosfet and is ideal for space constrained applications

and those requiring tight electrical matching.

The hermetically sealed TO-78 package is well suited

for high reliability and harsh environment applications.

(See Packaging Information).

Tel: +44 1603 788967

Device Schematic

TO-78 (Bottom View)

Available Packages:

LS3N191 in TO-72

LS3N191 in bare die.

Please contact Micross for full

package and die dimensions

LS3N191 Features:

Very high Input Impedance

High Gate Breakdown Voltage

Low Capacitance

Note 1 ‐ Absolute maximum ratings are limiting values above which LS3N191 serviceability may be impaired. 

Note 2 – Per Transistor 

Note 3 – Approximately doubles for every 10

Note 4 – Measured at end points,