HAF2002

3

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

I

D1

10

——A

V

Drain current

I

D2

——10

mA

V

Drain to source breakdown

voltage

V

(BR)DSS

60

——V

I

Gate to source breakdown

voltage

V

(BR)GSS

16

——V

I

Gate to source breakdown

voltage

V

(BR)GSS

–2.8

—

—

V

I

Gate to source leak current

I

GSS1

—

—

100

µAV

I

GSS2

——50

µAV

I

GSS3

——1

µAV

I

GSS4

—

—

–100

µAV

Input current (shut down)

I

GS(op)1

—

0.8

—

mA

V

I

GS(op)2

—

0.35

—

mA

V

Zero gate voltege drain current

I

DSS

—

—

250

µAV

Gate to source cutoff voltage

V

GS(off)

1.0

—

2.25

V

I

Static drain to source on state

resistance

R

DS(on)

—

5065m

Ω

I

Note3

Static drain to source on state

resistance

R

DS(on)

—

3043m

Ω

I

Note3

Forward transfer admittance

|y

6

12

—

S

I

Note3

Output capacitance

Coss

—

630

—

pF

V

f = 1 MHz

Turn-on delay time

t

d(on)

—

7.5

—

µsI

Rise time

t

r

—29

—

µsR

Turn-off delay time

t

d(off)

—34

—

µs

Fall time

t

f

—26

—

µs

Body–drain diode forward

voltage

V

DF

—

1.0

—

V

I

Body–drain diode reverse

recovery time

t

rr

—

110

—

ns

I

diF/ dt =50A/

µs

Over load shut down

t

os1

—

1.8

—

ms

V

operation time

Note4

t

os2

—

0.7

—

ms

V

Note:

3. Pulse test

4. Include the time shift based on increasing of channel temperature when operate under over load

condition.

See characteristic curve of HAF2001.