HAF2011 datasheet(2/6 Pages) HITACHI

Il numero della parte	HAF2011

Spiegazioni elettronici	Silicon N Channel MOS FET Series Power Switching

PDF	6 Pages

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Produttore elettronici	HITACHI [Hitachi Semiconductor]

Homepage	http://www.renesas.com/eng

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HAF2011(L),HAF2011(S)

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

DSS

Gate to source voltage

GSS

Gate to source voltage

GSS

–2.5

Drain current

Drain peak current

D(pulse)

Note1

Body-drain diode reverse drain current

Channel dissipation

Pch

Note2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10µs, duty cycle ≤ 1 %

2. Value at Ta = 25

°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

—

1.2

Input current

IH1

—

100

µA

Vi = 8V, V

DS = 0

(Gate non shut down)

IH2

——

µA

Vi = 3.5V, V

DS = 0

——

µA

Vi = 1.2V, V

DS = 0

Input current

IH(sd)1

—

0.8

—

Vi = 8V, V

DS = 0

(Gate non shut down)

IH(sd)2

—

0.35

—

Vi = 3.5V, V

DS = 0

Shut down temperature

—

175

—

°C

Channel temperature

Gate operation voltage

3.5

—

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