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SW100N10B Scheda tecnica(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW100N10B Scheda tecnica(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Feb. 2014. Rev. 1.0 Features ■ High ruggedness ■ R DS(ON) (Max 10.5m Ω)@VGS=10V ■ Gate Charge (Typ 106nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. N-channel TO-220 MOSFET Absolute maximum ratings Symbol Parameter Value Unit V DSS Drain to Source Voltage 100 V I D Continuous Drain Current (@T C=25 oC) 100* A Continuous Drain Current (@T C=100 oC) 63* A I DM Drain current pulsed (note 1) 400 A V GS Gate to Source Voltage ± 20 V E AS Single pulsed Avalanche Energy (note 2) 1121 mJ E AR Repetitive Avalanche Energy (note 1) 171 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 318 W Derating Factor above 25oC 2.5 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 0.39 oC/W R thcs Thermal resistance, Case to Sink 0.5 oC/W R thja Thermal resistance, Junction to ambient 51.6 oC/W 1/5 *. Drain current is limited by junction temperature. BV DSS : 100V I D : 100A R DS(ON) : 10.5mΩ 1 2 3 SW100N10B SAMWIN Item Sales Type Marking Package Packaging 1 SW P 100N10 SW 100N10B TO-220 TUBE Order Codes 1. Gate 2. Drain 3. Source 1 2 3 TO-220 |
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