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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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SW830 Scheda tecnica(PDF) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW830 Scheda tecnica(HTML) 3 Page - Xian Semipower Electronic Technology Co., Ltd. |
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3 / 5 page  Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2012. Rev. 3.0 3/5 SAMWIN Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 3. Gate charge characteristics SW830 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 10.0 20.0 30.0 40.0 Qg, Total Gate Charge (nC) VDS=400V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V VGS=20V VGS=10V Fig. 4. On state current vs. diode forward voltage Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature 150℃ 25℃ 0 0.5 1 1.5 2 2.5 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） 0.8 0.9 1 1.1 1.2 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） |
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