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SSPL2015 Scheda tecnica(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSPL2015 Scheda tecnica(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 8 page  SSPL2015 ©Silikron Semiconductor CO.,LTD. 2012.09.04 Version : 1.1 page 1 of 8 www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 18 ① A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 ① IDM Pulsed Drain Current ② 72 PD @TC = 25°C Power Dissipation ③ 150 W Linear Derating Factor 1.0 W/°C VDS Drain-Source Voltage 200 V VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy @ L=4.2mH 412 mJ IAS Avalanche Current @ L=4.2mH 14 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +175 °C VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① TO220 Marking and pin Assignment Schematic diagram Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature These N-Channel enhancement mode power field effect transistors are produced using silikron proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. |
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