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PD20010STR-E Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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PD20010STR-E Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() PD20010-E Electrical data Doc ID 15514 Rev 2 3/13 1 Electrical data 1.1 Maximum ratings TCASE = 25 °C 1.2 Thermal data Table 2. Absolute maximum ratings Symbol Parameter Value Unit V(BR)DSS Drain-source voltage 40 V VGS Gate-source voltage -0.5 to +15 V ID Drain current 5 A PDISS Power dissipation (@ TC = 70 °C) 59 W TJ Max. operating junction temperature 165 °C TSTG Storage temperature -65 to +150 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Junction - case thermal resistance 1.6 °C/W |
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