AT41486 datasheet(1/5 Pages) HP

Il numero della parte	AT41486

Spiegazioni elettronici	Up to 6 GHz Low Noise Silicon Bipolar Transistor

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Produttore elettronici	HP [Agilent(Hewlett-Packard)]

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4-129

Up to 6 GHz Low Noise

Silicon Bipolar Transistor

Technical Data

Features

• Low Noise Figure:

1.4 dB Typical at 1.0 GHz

1.7 dB Typical at 2.0 GHz

• High Associated Gain:

18.0 dB Typical at 1.0 GHz

13.0 dB Typical at 2.0 GHz

• High Gain-Bandwidth

Product: 8.0 GHz Typical fT

• Surface Mount Plastic

Package

• Tape-and-Reel Packaging

Option Available[1]

AT-41486

86 Plastic Package

Note:

1. Refer to “Tape-and-Reel Packaging for

Semiconductor Devices”.

Description

Hewlett-Packard’s AT-41486 is a

general purpose NPN bipolar

transistor that offers excellent

high frequency performance. The

AT-41486 is housed in a low cost

surface mount .085" diameter

plastic package. The 4 micron

emitter-to-emitter pitch enables

this transistor to be used in many

different functions. The 14 emitter

finger interdigitated geometry

yields an intermediate sized

transistor with impedances that

are easy to match for low noise

and moderate power applications.

Applications include use in

wireless systems as an LNA, gain

stage, buffer, oscillator, and

mixer. An optimum noise match

near 50

Ω at 900 MHz, makes this

device easy to use as a low noise

amplifier.

The AT-41486 bipolar transistor is

fabricated using Hewlett-Packard’s

10 GHz fT Self-Aligned-Transistor

(SAT) process. The die is nitride

passivated for surface protection.

Excellent device uniformity,

performance and reliability are

produced by the use of ion-

implantation, self-alignment

techniques, and gold metalization

in the fabrication of this device.

1

4

3

2

EMITTER

BASE

EMITTER

COLLECTOR

PinConnections

5965-8928E

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