HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6513-B

Issued Date : 1993.01.15

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HSB562

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HSB562 is designed for general purpose low frequency power

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 900 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -25 V

VCEO Collector to Emitter Voltage .................................................................................... -20 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ............................................................................................................ -1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-25

-

-

V

IC=-10uA, IE=0

BVCEO

-20

-

-

V

IC=-1mA, IB=0

BVEBO

-5

-

-

V

IE=-10uA, IC=0

ICBO

-

-

-1

uA

VCB=-20V, IE=0

*VCE(sat)

-

-

-500

mV

IC=-800mA, IB=-80mA

VBE(on)

-

-

-1

V

IC=-500mA, VCE=-2V

*hFE

85

-

240

VCE=-2V, IC=-500mA

fT

-

350

-

MHz

VCE=-2V, IC=-500mA

Cob

-

38

-

pF

VCB=-10V, f=1MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE

Rank

B

C

Range

85-170

120-240