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31DF6_2015 Scheda tecnica(PDF) 1 Page - National Instruments Corporation |
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31DF6_2015 Scheda tecnica(HTML) 1 Page - National Instruments Corporation |
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1 / 2 page  3A Avg. 600Volts Fast Recovery Diode DSE-13050（1/2） 31DF6 構造：拡散型シリコンダイオード（FRD），リード線型 Construction :Diffusion-type Silicon Diode，Axial Lead Type 用途：高周波整流用 Application : High-Frequency Rectification 特長 Feature 低ノイズ Low Noise 高耐圧 High Voltage 高速 High Speed Recovery trr=35ns trr=35ns ■ 絶対最大定格（表示無き場合 Ta=25℃） Absolute Maximum Ratings (Ta = 25 oC unless otherwise stated) 項目 Item 記号 Symbol 条件 Conditions 定格値 Rating 単位 Units くり返しピーク逆電圧 Repetitive Peak Reverse Voltage VRRM － 600 V Ta=29℃ *1 1.2 平均整流電流 Average Rectified Output Current IO 50Hz 正弦半波通電 抵抗負荷 Half Sine Wave， Resistive Load T1=109℃ (T1:Lead Temperature) 3.0 A 実効順電流 RMS Forward Current IF(RMS) － 4.71 A サージ順電流 Surge Forward Current IFSM 50Hz 正弦半波 1 サイクル 非繰り返し 50Hz half Sine Wave，1 cycle，Non-repetitive 45 A 動作接合温度範囲 Operation Junction Temperature Range Tjw － -40～+150 ℃ 保存温度範囲 Storage Temperature Range Tstg － -40～+150 ℃ ■電気的・熱的特性 Electrical / Thermal Characteristics 項目 Item 記号 Symbol 条件 Conditions 最小値 min. 代表値 typ. 最大値 max. 単位 Units ピーク逆電流 Peak Reverse Current IRM VRM=VRRM，Tj=25℃ - - 20 µA ピーク順電圧 Peak Forward Voltage VFM IFM=3.0A，Tj=25℃ - - 1.7 V 逆回復時間 Reverse Recovery Time trr IFM=3.0A，-di/dt=50A/µs，Tj=25℃ 35 ns Rth(j-a) 接合部・周囲間 Junction to Ambient *1 - - 80 ℃/W 熱抵抗 Thermal Resistance Rth(j-l) 接合部・リード間 Junction to Lead - - 8 ℃/W *1 : 単体フィン無し／Without Fin or P.C. Board ● 本資料の記載内容は製品改良などのため予告なく変更することがあります。 ● The content specified herein is subject to change without notice. 外形寸法図 OUTLINE DRAWING Dimension : mm Package : Axial 6 ■ Weight : 1.19g（typ.） ■ Flammability : Epoxy Resin=UL94V-0 Recognized Date of issue:2013.10.2 |
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