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IDT7M1003S40C Scheda tecnica(PDF) 7 Page - Integrated Device Technology

Il numero della parte IDT7M1003S40C
Spiegazioni elettronici  128K x 8 64K x 8 CMOS DUAL-PORT STATIC RAM MODULE
PDF  11 Pages
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Produttore elettronici  IDT [Integrated Device Technology]
Homepage  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7M1003S40C Scheda tecnica(HTML) 7 Page - Integrated Device Technology

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IDT7M1001/1003
128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.5
7
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (R/
W
W CONTROLLED TIMING)(1,3,5,8)
ADDRESS
OE
CS
t WC
t OHZ (9)
t AW
R/W
t WP(2)
t AS
t WHZ(9)
DATA OUT
DATA IN
(4)
(4)
t OW (9)
t DW
t DH
t WR (7)
DATA VALID
(6)
2804 drw 08
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (
CS
CS CONTROLLED TIMING)(1,3,5,8)
NOTES:
1. R/
W must be HIGH during all address transitions.
2. A write occurs during the overlap (tWP) of a LOW
UB or LB and a LOW CS and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of
CS or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the
CS or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
6. Timing depends on which enable signal is asserted last.
7. Timing depends on which enable signal is de-asserted first.
8. If
OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data
to be placed on the bus for the required tDW. If
OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can
be as short as the specified tWP.
9. This parameter is guaranteed by design but not tested.
NOTES:
1. R/
W is HIGH for Read Cycles
2. Device is continuously enabled.
CS = LOW. UB or LB = LOW. This waveform cannot be used for semaphore reads.
3. Addresses valid prior to or coincident with
CS transition low.
4.
OE = LOW.
5. To access RAM,
CS = LOW, UB or LB = LOW, SEM = H. To access semaphore, CS = HIGH and SEM = LOW.
6. Timing depends on which enable signal is asserted last.
7. Timing depends on which enable signal is de-asserted first.
8. If
OE is LOW during a R/W controlled write cycle, the write pulse width must be larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to
be placed on the bus for the required tDW. If
OE is HIGH during a R/W controlled write cycle, this requirement does not apply and the write pulse width
be as short as the specified tWP.
9. This parameter is guaranteed by design but not tested.
ADDRESS
t WC
DATA IN
t DW
t DH
DATA VALID
t AW
R/W
t WP (2)
t WR(7)
CS
t AS (6)
UB
LB
or
2804 drw 09



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