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2SB772A-R Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte 2SB772A-R
Spiegazioni elettronici  PNP Transistors
PDF  1 Pages
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB772A-R Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB772A-R Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
www.kexin.com.cn
PNP Transistors
■
Features
●
PNP transistor High current output up to 3A
●
Low Saturation Voltage
●
Complement to 2SD882A
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCBO
-70
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current to Continuous
IC
-3
A
Collector Dissipation
Pc
0.5
W
Junction Temperature
TJ
150
℃
Storage Temperature
Tstg
-55 to 150
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
Ic=-100uA ,IE=0
-70
V
Collector-emitter breakdown voltage
VCEO
IC= -10 mA , IB=0
-60
V
Emitter-base breakdown voltage
VEBO
IE= -100 uA ,IC=0
-6
V
Collector cut-off current
ICBO
VCB=-70 V , IE=0
-1
μA
Emitter cut-off current
IEBO
VEB=-6V , IC=0
-1
μA
VCE= -2V, IC= -1A
60
400
VCE=-2V, IC= -100mA
32
Collector-emitter saturation voltage
VCE(sat)
IC=-2A, IB=- 0.2A
-0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
V
Transition frequency
f T
VCE=-5 V, IC=-0.1mA,f = 10MHz
50
MHz
DC current gain
hFE
2SB772A
■
Classification of hfe(1)
Type
2SB772A-R
2SB772A-Q
2SB772A-P
2SB772A-E
Range
60-120
100-200
160-320
200-400
Marking
772AR
772AQ
772AP
772AE
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1


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