2SJ356_15 datasheet(2/4 Pages) KEXIN

2 / 4 page

SMD Type

www.kexin.com.cn

MOSFET

P-Channel MOSFET

2SJ356

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Electrical Characteristics Ta = 25℃

■

Marking

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Typical Characterisitics

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

100

TA - Ambient Temperature - ˚C

FORWARD BIAS SAFE OPERATING AREA

–0.5

–10

VDS - Drain to Source Voltage - V

100

125

150

–5

–2

–1

–0.5

–0.2

–0.1

–0.05

Single pulse

–

–2

–5

–10 –20

–50

= 100

1 ms

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-60

Zero Gate Voltage Drain Current

IDSS

VDS=-60V, VGS=0V

-10

Gate-Body leakage current

IGSS

VDS=0V, VGS=±16V

Gate to Source Cutoff Voltage

VGS(off)

VGS=-10V ID=-1mA

-1

-2

VGS=-10V, ID=-1A

0.5

VGS=-4V, ID=-1A

0.95

Forward Transconductance

gFS

VDS=-10V, ID=-1A

Input Capacitance

Ciss

270

Output Capacitance

Coss

145

Reverse Transfer Capacitance

Crss

Gate Input Charge

11.6

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

3.8

Turn-On DelayTime

td(on)

4.3

Turn-On Rise Time

Turn-Off DelayTime

td(off)

115

Turn-Off Fall Time

Body Diode Reverse Recovery Time

trr

Internal Diode Reverse Recovery Ch

Qrr

Static Drain-Source On-Resistance

RDS(On)

IF=-2A, dI/dt=50A/μs

VGS=-10V, VDS=-48V,

ID=-2A,IG=-2mA

VGS(on)=-10V, ID=-1A,

RL=25Ω,RG=10Ω,VDD=-25V

VGS=0V, VDS=-10V, f=1MHz

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