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SI2333CDS Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Il numero della parte SI2333CDS
Spiegazioni elettronici  P-Channel Enhancement MOSFET
PDF  5 Pages
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Produttore elettronici  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Homepage  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

SI2333CDS Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  SI2333CDS Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd SI2333CDS Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd SI2333CDS Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd SI2333CDS Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd SI2333CDS Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd  
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www.kexin.com.cn
2
MOSFET
P-Channel Enhancement MOSFET
SI2333CDS (KI2333CDS)
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=-250μA, VGS=0V
-12
V
VDS=-12V, VGS=0V
-1
VDS=-12V, VGS=0V, TJ=55℃
-10
Gate-Body leakage current
IGSS
VDS=0V, VGS=±8V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250μA
-0.4
-1
V
VGS=-4.5V, ID=-5.1A
28.5
35
VGS=-2.5V, ID=-4.5A
36
45
VGS=-1.8V, ID=-2.0A
46
59
On state drain current *1
ID(ON)
VGS=-4.5V, VDS=-5V
-20
A
Forward Transconductance *1
gFS
VDS=-5V, ID=-1.9A
1.6
S
Gate Resistance
Rg
f=1.0MHz
4.0
Ω
Input Capacitance
Ciss
1225
Output Capacitance
Coss
315
Reverse Transfer Capacitance
Crss
260
VGS=-4.5V, VDS=-6V, ID=-5.1A
15
25
9
15
Gate Source Charge
Qgs
1.9
Gate Drain Charge
Qgd
3.8
Turn-On DelayTime
td(on)
13
20
Turn-On Rise Time
tr
35
60
Turn-Off DelayTime
td(off)
45
70
Turn-Off Fall Time
tf
12
20
Body Diode Reverse Recovery Charge
Qrr
20
40
nC
Body Diode Reverse Recovery Time
trr
32
50
Reverse Recovery Fall Time
ta
16
Reverse Recovery Rise Time
tb
16
Maximum Body-Diode Continuous Current
IS
TC=25℃
-1.0
Pulse Diode Forward Current *1
ISM
-20
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-0.7
-1.2
V
ns
Total Gate Charge
Qg
VGS=-2.5V, VDS=-6V, ID=-5.1A
IF = 1.0 A, di/dt = 100 A/ us,TJ=25℃
A
pF
nC
VGS=-4.5V, VDS=-6V, RL=6Ω,RGEN=1Ω
ID=-1.0A
ns
VGS=0V, VDS=-6V, f=1MHz
Zero Gate Voltage Drain Current
IDSS
μ
A
mΩ
Static Drain-Source On-Resistance *1
RDS(On)
*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.
■
Marking
Marking
O3*



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