BC847S_15 datasheet(2/3 Pages) SECOS

2 / 3 page

Any changing of specification will not be informed individual

BC847S

NPN Silicon

Multi-Chip Transistor

http://www.SeCoSGmbH.com

Elektronische Bauelemente

Typical Characteristics

Collector-Emitter Saturation

Voltage vs Collector Current

0.1

100

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)

25 °C

- 40 °C

125 °C

β = 10

Typical Pulsed Current Gain

vs Collector Current

0.01

0.03

0.1

0.3

100

200

400

600

800

1000

1200

I - COLLECTOR CURRENT (mA)

125 °C

25 °C

- 40 °C

= 5.0 V

Base-Emitter Saturation

Voltage vs Collector Current

0.1

100

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

β = 10

25 °C

- 40 °C

125 °C

Base-Emitter ON Voltage vs

Collector Current

0.1

0.2

0.4

0.6

0.8

I - COLLECTOR CURRENT (mA)

= 5.0 V

25 °C

- 40 °C

125 °C

Contours of Constant Gain

Bandwidth Product (f )

0.1

100

I - COLLECTOR CURRENT (mA)

175 MHz

150 MHz

125 MHz

75 MHz

100 MHz

Normalized Collect or-Cutoff Curre nt

vs Ambient Temperature

100

125

150

100

1000

T - AMBIE NT TEMP ERATURE ( C)

01-Jan-2006 Rev. B

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