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RFD8P06LE Scheda tecnica(PDF) 4 Page - Intersil Corporation

Il numero della parte RFD8P06LE
Spiegazioni elettronici  8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
PDF  8 Pages
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Produttore elettronici  INTERSIL [Intersil Corporation]
Homepage  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

RFD8P06LE Scheda tecnica(HTML) 4 Page - Intersil Corporation

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7-14
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves Unless Otherwise Specified
-30
-10
-1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
STARTING TJ = 150
oC
STARTING TJ = 25
oC
If R = 0
tAV = (L) (IAS) / (1.3RATED BVDSS - VDD)
If R
≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]
0
0
-1.5
-3.0
-4.5
-7.5
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -4V
VGS = -10V
-6.0
VGS = -4.5V
VGS = -3V
VGS = -5V
-20
-30
-15
-25
-5
PULSE DURATION = 250
µs
TC = 25
oC
DUTY CYCLE = 0.5% MAX
0
-3.0
-4.5
-6.0
-7.5
-1.5
0
-10
175oC
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
VDD = -15V
VGS, GATE TO SOURCE VOLTAGE (V)
-55oC
25oC
-20
-30
-25
-15
-5
ID = -8A
ID = -4A
ID = -2A
ID = -1A
200
300
400
500
600
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
2.25
1.25
1.00
0.75
0.50
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.50
80
1.75
2.00
160
200
-80
VGS = -5V, ID = -8A
PULSE DURATION = 80
µs
DUTY CYCLE = 0.5% MAX
2.0
1.05
1.0
0.95
0.9
-40
0
40
TJ, JUNCTION TEMPERATURE (
oC)
120
1.1
80
1.15
-80
160
200
ID = -250µA
RFD8P06LE, RFD8P06LESM, RFP8P06LE



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