KTC3198 datasheet(1/2 Pages) SECOS

Il numero della parte	KTC3198

Spiegazioni elettronici	NPN Plastic Encapsulated Transistor

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Produttore elettronici	SECOS [SeCoS Halbleitertechnologie GmbH]

Homepage	http://www.secosgmbh.com

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1 / 2 page

Elektronische Bauelemente

KTC3198

0.15A , 60V

NPN Plastic Encapsulated Transistor

21-Feb-2014 Rev.C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.



Base



Emitter

Collector



RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE



V(BR)CBO=60V

CLASSIFICATION OF hFE (1)

Product-Rank

KTC3198-O

KTC3198-Y

KTC3198-GR

Range

70~140

120~240

200~400



ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Collector Current

ICM

150

mA

Power Dissipation

PCM

625

mW

Junction, Storage Temperature

TJ, TSTG

125, -55~125

°C

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Collector to Base Breakdown Voltage

V(BR)CBO

60

-

V

IC=100μA, IE=0

Collector to Emitter Breakdown Voltage

V(BR)CEO

50

-

V

IC=5mA, IB=0

Emitter to Base Breakdown Voltage

V(BR)EBO

5

-

V

IE=100μA, IC=0

Collector Cut-Off Current

ICBO

-

0.1

μA

VCB=60V, IE=0

Emitter Cut-Off Current

IEBO

-

0.1

μA

VEB=5V, IC=0

70

400

VCE=6V, IC=2mA

DC Current Gain

hFE

25

100

VCE=6V, IC=150mA

Collector to Emitter Saturation Voltage

VCE(sat)

-

0.1

0.25

V

IC=100mA, IB=10mA

Base to Emitter Saturation Voltage

VBE(sat)

-

1

V

IC=100mA, IB=10mA

Transition Frequency

fT

80

-

MHz

VCE=10V, IC=1mA, f=30MHz

TO-92



Emitter



Collector



Base

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.70

F

0.30

0.51

B

4.30

4.70

G

1.27 TYP.

C

12.70

-

H

1.10

1.40

D

3.30

3.81

J

2.42

2.66

E

0.36

0.56

K

0.36

0.76

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