ACE2302C datasheet(1/6 Pages) ACE

Il numero della parte	ACE2302C

Spiegazioni elettronici	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Produttore elettronici	ACE [ACE Technology Co., LTD.]

Homepage	http://www.ace-ele.com

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ACE2302C

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as load switch or in PWM

applications.

Features

 20V/5.1A

 R

DS(ON)

=28

mΩ (typ.) @ V

GS=4.5V

 R

DS(ON)

=38

mΩ (typ.) @ V

GS=2.5V

 R

DS(ON)

=60

mΩ (typ.) @ V

GS=1.8V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25℃

ID

5.1

A

TA=70℃

4

Drain Current (Pulsed)

IDM

20

A

Power Dissipation

TA=25℃

PD

1

W

Operating temperature / storage temperature TJ/TSTG -55~150 ℃

Packaging Type

SOT-23-3

3

1

2

Ordering information

ACE2302C XX + H

SOT-23-3

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

BM : SOT-23-3

Pb - free

Halogen - free

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