OP275GSZ datasheet(3/12 Pages) AD

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OP275–SPECIFICATIONS

OP275

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ABSOLUTE MAXIMUM RATINGS1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V

Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±22 V

Differential Input Voltage2 . . . . . . . . . . . . . . . . . . . . . . . ±7.5 V

Output Short-Circuit Duration to GND3 . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 60 sec) . . . . . . . . . .300°C

Package Type

JA

JC

Unit

8-Lead Plastic DIP (P)

103

°C/W

8-Lead SOIC (S)

158

°C/W

NOTES

1Absolute maximum ratings apply to packaged parts, unless otherwise noted.

2For supply voltages greater than ±22V, the absolute maximum input voltage is equal

to the supply voltage.

3Shorts to either supply may destroy the device. See data sheet for full details.

4JA is specified for the worst-case conditions, i.e., JA is specified for device in socket

for PDIP packages; JA is specified for device soldered in circuit board for SOIC

packages.

ORDERING GUIDE

Model

Temperature Range

Package Description

Package Option

OP275GP

–40°C to +85°C

8-Lead PDIP

N-8

OP275GS

–40°C to +85°C

8-Lead SOIC

R-8

OP275GS-REEL

–40°C to +85°C

8-Lead SOIC

R-8

OP275GS-REEL7

–40°C to +85°C

8-Lead SOIC

R-8

OP275GSZ*

–40°C to +85°C

8-Lead SOIC

R-8

OP275GSZ-REEL*

–40°C to +85°C

8-Lead SOIC

R-8

OP275GSZ-REEL7*

–40°C to +85°C

8-Lead SOIC

R-8

*Z = Pb-free part.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000V readily accumulate

on the human body and test equipment and can discharge without detection. Although the OP275 features

proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy

electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance

degradation or loss of functionality.

REV. C

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