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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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IRF1902 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRF1902 Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A IDM Pulsed Drain Current 17 PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 11/15/01 Absolute Maximum Ratings W www.irf.com 1 IRF1902 HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) Ω) Ω) Ω) Ω) ID 20V 85@VGS = 4.5V 4.0A 170@VGS = 2.7V 3.2A SO-8 T op V iew 8 1 2 3 4 5 6 7 D D D D G S A S S A These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Description l Ultra Low On-Resistance l N-Channel MOSFET l Surface Mount l Available in Tape & Reel Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance PD - 94282A |
Codice articolo simile - IRF1902 |
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Descrizione simile - IRF1902 |
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