IRF7204 datasheet(1/9 Pages) IRF

Il numero della parte	IRF7204

Spiegazioni elettronici	Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

PDF	9 Pages

Scroll/Zoom	100%

Produttore elettronici	IRF [International Rectifier]

Homepage	http://www.irf.com

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1 / 9 page

HEXFET® Power MOSFET

PD - 9.1103B

l Adavanced Process Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

Description

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications.

With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

IRF7204

SO-8

VDSS = -20V

RDS(on) = 0.060Ω

ID = -5.3A

8/25/97

To p V ie w

8

1

2

3

4

5

6

7

D

G

S

A

D

S

Parameter

Min.

Typ.

Max.

Units

RθJA

Maximum Junction-to-Ambient

–––

50

°C/W

Parameter

Max.

Units

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

-5.3

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

-4.2

IDM

Pulsed Drain Current

-21

PD @TC = 25°C

Power Dissipation

2.5

Linear Derating Factor

0.020

W/°C

VGS

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

-1.7

V/nS

TJ,TSTG

Junction and Storage Temperature Range

-55 to + 150

Absolute Maximum Ratings

A

Thermal Resistance Ratings

W

°C

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