IRF7607 datasheet(1/8 Pages) IRF

Il numero della parte	IRF7607

Spiegazioni elettronici	Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

PDF	8 Pages

Scroll/Zoom	100%

Produttore elettronici	IRF [International Rectifier]

Homepage	http://www.irf.com

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1 / 8 page

1/19/00

HEXFET® Power MOSFET

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

70

°C/W

Thermal Resistance

VDSS = 20V

RDS(on) = 0.030Ω

Description

www.irf.com

1

PD - 93845

IRF7607

q

Trench Technology

q

Ultra Low On-Resistance

q

N-Channel MOSFET

q

Very Small SOIC Package

q

Low Profile (<1.1mm)

q

Available in Tape & Reel

New trench HEXFET® power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8

™ package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal package for

applications where printed circuit board space is at a premium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro8

™

Parameter

Max.

Units

VDS

Drain- Source Voltage

20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ 4.5V

6.5

ID @ TA= 70°C

Continuous Drain Current, VGS @ 4.5V

5.2

A

IDM

Pulsed Drain Current

50

PD @TA = 25°C

Power Dissipation

1.8

PD @TA = 70°C

Power Dissipation

1.2

Linear Derating Factor

0.014

W/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

Absolute Maximum Ratings

W

PROVISIONAL

T op V iew

8

1

2

3

4

5

6

7

D

G

S

A

S

A

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