IRFP360LC

PD - 9.1230

Revision 0

Ultra Low Gate Charge

Reduced Gate Drive Requirement

Isolated Central Mounting Hole

Dynamic dv/dt Rated

Repetitive Avalanche Rated

Absolute Maximum Ratings

Parameter

Max.

Units

23

14

A

Pulsed Drain Current

92

Power Dissipation

280

W

Linear Derating Factor

2.2

W/°C

Gate-to-Source Voltage

±30

V

Single Pulse Avalanche Energy

1200

mJ

Avalanche Current

23

A

Repetitive Avalanche Energy

28

mJ

dv/dt

Peak Diode Recovery dv/dt

4.0

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

0.45

Case-to-Sink, Flat, Greased Surface

––––

0.24

––––

°C/W

Junction-to-Ambient

––––

––––

40

Thermal Resistance

Description

This new series of Low Charge HEXFET Power MOSFETs achieve significantly

lower gate charge over conventional MOSFETs.

Utilizing advanced Hexfet

technology the device improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device

improvements combined with the proven ruggedness and reliability of HEXFETs

offer the designer a new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

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