R09DS0021EJ0300 Rev.3.00

Page 1 of 7

Jun 28, 2011

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2SC3356

NPN Silicon RF Transistor

NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

FEATURES

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

2SC3356

2SC3356-A

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC3356-T1B

2SC3356-T1B-A

3-pin Minimold

(Pb-Free)

3 kpcs/reel

• Pin 3 (Collector) face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3.0

V

Collector Current

100

mA

Total Power Dissipation

Note

200

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Free air

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

R09DS0021EJ0300

Rev.3.00

Jun 28, 2011

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