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IRG4PH50S Scheda tecnica(PDF) 3 Page - International Rectifier

Il numero della parte IRG4PH50S
Spiegazioni elettronici  INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
PDF  8 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRG4PH50S Scheda tecnica(HTML) 3 Page - International Rectifier

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IRG4PH50S
www.irf.com
3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
0.0
1.0
2.0
3.0
4.0
5.0
V
, Collector-to-Emitter Voltage (V)
CE

V
= 15V
80µs PULSE WIDTH
GE

T = 150 C
J
°

T = 25 C
J
°
1
10
100
1000
5
6
7
8
9
10
11
12
V
, Gate-to-Emitter Voltage (V)
GE

V
= 50V
5µs PULSE WIDTH
CC

T = 25 C
J
°

T = 150 C
J
°
0
20
40
60
0.1
1
10
f, F reque ncy (kH z)
A
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
T
= 125°C
T
= 90°C
Gate drive as specified
sink
J
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated



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