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AN4402 Scheda tecnica(PDF) 21 Page - STMicroelectronics |
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AN4402 Scheda tecnica(HTML) 21 Page - STMicroelectronics |
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21 / 39 page ![]() DocID025557 Rev 1 21/39 AN4402 Demagnetization energy 38 3.4 Clamping energy at high battery voltage 3.4.1 Qualitative analysis when the gate-drain clamp is active The gate-drain clamp is activated As we will see, the theoretical condition with RL = 0Ω doesn’t provide accurate results, especially when VBAT is close or equal to VCL_LS. However, we can draw two qualitative observations from the simplified expression of EDEMAG (Equation 17). Equation 17: EDEMAG is higher than the energy stored in the inductor Since VBAT < VCL_LS, we see from the simplified expression of EDEMAG(Equation 17), that the dissipated energy in the output MOSFET is higher than the energy stored in the inductor (). This is due to the fact that the battery provides additional energy to the output MOSFET during the turn-off phase. EDEMAG increases faster than a square function of VBAT IL0 is proportional to the battery voltage (), and the term is proportional to the square of IL0 and therefore to the square of VBAT. RL > 0 Ω No parallel resistor to the inductor: RP = +∞ Equation 26 with RL = 0 Ω RP = +∞ Equation 27 with Table 7. EDEMAG2_HS with VBAT > VCL_LS – VCL_HS (continued) Conditions EDEMAG2_HS: VBAT > VCL_LS – VCL_HS L R L ------- V CL_LS IL0 V CL_LS V BAT – R L --------------------------------------- V CL_LS V CL_LS V BAT – --------------------------------------- ln – I L0 V BAT R L -------------- = 1 2 --- LI L0 2 V CL_LS V CL_LS V BAT – --------------------------------------- I L0 V BAT R L -------------- = E DEMAG_LS R P + ∞ → R L 0 → lim E DEMAG2_LS R P + ∞ → R L 0 → lim 1 2 ---LIL0 2 V CL_LS V CL_LS V BAT – ---------------------------------------- == 1 2 --- LI L0 2 I L0 V BAT R L -------------- = 1 2 --- LI L0 2 |
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