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AN1826 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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AN1826 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() AN1826 - APPLICATION NOTE 3/5 Fig. 4: Varistor and Transil™ diode EOS electrical behaviors. Figure 4 shows the behavior of both Varistor and Transil™ when submitted to EOS surges. Tests were performed with 10A peak current, in such a condition the Varistor clamps at 37.2V while remaining voltage across the Transil™ in the same condition is only 24.6V. That means in such a surge condition the protected IC's input will see 12.6V less in case of Transil™ diode use; that leads to a better clamping factor for Transil™ diode versus varistor. Fig. 5: Varistor and Transil™ diode ESD electrical behaviors. Current 10.0V Ch2 Ch2 200mV M 5.00µs 96mV Voltage Tek Run: 10.0MS/s Sample T Trig? Ch1 2 [ ] 1 Varistor V @10A=37.2V CL Current 5.0 V Ch2 200mV M 5.00µs 96mV Voltage Tek Run: 10.0MS/s Sample T Trig? Ch1 [ ] 2 1 Ch2 Transil™ diode V @10A=24.6V CL Varistor Transil™ VCL typ.(V) @ IPP = 10A 37.2 24.6 VBR typ. (V) @ 1mA 18.4 15.2 CF =VCL/VBR 2.02 1.62 Table 1: Clamping factor comparison. Varistor Transil™ diode |
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