New 650 V JBS SiC diodes

AN4242

14/26

DocID024196 Rev 1

there is a bias of the merged PN junctions, roughly beyond 3 V, 10 A @ 175 °C; 3.5 V, 15 A

@ 125 °C; 4 V, 25 A @ 75 °C….

Figure 10. Forward voltage comparison between pure Schottky SiC diode and

JBS SiC diode

Figure 11 shows the characterization of the 2nd generation SiC diode up to 100 A with a

negative below 1.5 A, then positive up to around 42 A, then once again negative. When the

line giving a forward characteristics almost independent of the temperature.

25 °C

175 °C

75 °C

125 °C

STPSC606D 1G ( SiC Schottky

)

STPSC6H065D 2G ( SiC JBS)

Thermal effect

VF=f(IF) versus Tj (tp=50 µs)

VF (V)

IF (A)

8

7

6

5

4

3

2

1

0

010

15

20

25

30

5

35

40

25 °C

225 °C

STPSC6H065D 2G

a

a

a

a

VF=f(IF) versus Tj (tp = 1 µs)

VF (V)

8

7

6

5

4

3

2

1

0

020

30

40

50

60

10

70

80

90

100

9

IF (A)