IRF7350 datasheet(1/16 Pages) IRF

Il numero della parte	IRF7350

Spiegazioni elettronici	Power MOSFET(Vdss=-100V)

PDF	16 Pages

Scroll/Zoom	100%

Produttore elettronici	IRF [International Rectifier]

Homepage	http://www.irf.com

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1 / 16 page

HEXFET® Power MOSFET

Description

08/09/01

www.irf.com

1

IRF7350

SO-8

Symbol

Parameter

Typ.

Max.

Units

RθJL

Junction-to-Drain Lead

–––

20

RθJA

Junction-to-Ambient

–––

62.5

°C/W

Thermal Resistance

N-Ch

P-Ch

VDSS 100V

-100V

RDS(on) 0.21Ω

0.48

Ω

D1

N- CHA NNE L M O S FE T

P -CHA NNE L M O S F E T

D1

D2

G1

S2

G2

S1

T op V iew

8

1

2

3

4

5

6

7

These dual N and P channel HEXFET® power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET® power MOSFETs are

well known for, provides the designer with an extremely efficient and reliable

device for use in DC motor drives and load management applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety

of power applications. With these improvements, multiple devices can be

used in an application with dramatically reduced board space. The package

is designed for vapor phase, infra red, or wave soldering techniques.

l Ultra Low On-Resistance

l Dual N and P Channel MOSFET

l Surface Mount

l Available in Tape and Reel

Parameter

Units

A

Absolute Maximum Ratings

Max.

N-Channel

P-Channel

VDS

Drain-to-Source Voltage

100

-100

ID @ TA = 25°C

Continuous Drain Current, VGS @ 10V

2.1

-1.5

ID @ TA = 70°C

Continuous Drain Current, VGS @ 10V

1.7

-1.2

IDM

Pulsed Drain Current

8.4

-6.0

PD @TA = 25°C

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

EAS

Single Pulse Avalanche Energy

35

51

mJ

VGS

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

4.0

4.3

V/ns

TJ, TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

PD - 94226B

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