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MSK4853 Scheda tecnica(PDF) 2 Page - M.S. Kennedy Corporation |
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MSK4853 Scheda tecnica(HTML) 2 Page - M.S. Kennedy Corporation |
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2 / 9 page ![]() 2 Storage Temperature Range Junction Temperature Case Operating Temperature Range MSK4853H MSK4853 -55°C to +125°C 150°C -55°C to +125°C -40°C to +85°C Collector to Emitter Voltage Gate to Emitter Voltage Current (Continuous) Current Pulsed (1mS) Case Isolation Voltage TST TJ TC ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATING 600V ±20V 150A 300A 2500 V NOTES: Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only. Industrial grade devices shall be tested to subgroup 1 unless otherwise specified. HI-REL grade devices ("H" suffix) shall be 100% tested to subgroups 1, 2 and sample tested to subgroup 3. Subgroup 4 testing available upon request. Subgroup 1, 4 TA = +25°C 2, 5 TA = +125°C 3 TA = -55°C All specifications apply to both the upper and lower sections of the half bridge. VGE=15V unless otherwise specified. Continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle. Internal solder reflow temperature is 180°C, do not exceed. VCE VGE IOUT IOUTP VCASE 1 2 3 4 5 6 7 8 9 8 8548-20 Rev. F 12/14 9 |
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