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K430 Scheda tecnica(PDF) 1 Page - Knox Semiconductor, Inc |
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K430 Scheda tecnica(HTML) 1 Page - Knox Semiconductor, Inc |
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1 / 1 page ![]() P.O. BOX 609 • ROCKPORT, MAINE 04856 • 207-236-6076 • FAX 207-236-9558 LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 •• Conserves battery life •• Unique manufacturing process •• Provides lowest reverse leakage currents •• Low impedance at currents specified at 10 mA and below NOMINAL DYNAMIC IMPEDANCE REVERSE CURRENT PART ZENER VOLTAGE MAX Zz MAX Zzk @ 25° C NUMBER Vz @ Iz = 10 mA @ IZ = 10 mA @ IZ = 1 mA MAX Ir Vr (Vdc) (OHMS) (OHMS) (µA) (Vdc) K120 1.2 20 125 .05 0.4 K150 1.5 20 125 .05 0.5 K180 1.8 20 125 .05 0.6 K210 2.1 20 125 .05 0.9 K240 2.4 20 125 .05 1.2 K270 2.7 20 125 .05 1.7 K300 3.0 20 125 .05 1.9 K330 3.3 20 125 .05 2.2 K360 3.6 20 125 .05 2.5 K390 3.9 20 125 .05 2.7 K430 4.3 25 135 .05 3.1 K470 4.7 25 135 .05 3.5 K510 5.1 25 135 .05 3.8 Package Style DO-7 DC Power Dissipation @ Ta = 50° C 250 mW Operating Temperature (Topr) -65 to + 175° C Storage Temperature (Tstg) -65 to + 200° C Voltage Tolerance: Standard Device ±10% Other package syles available |
Codice articolo simile - K430 |
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Descrizione simile - K430 |
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