S5MB datasheet(1/4 Pages) TSC

Il numero della parte	S5MB

Spiegazioni elettronici	Surface Mount Glass Passivated Rectifiers

PDF	4 Pages

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Produttore elettronici	TSC [Taiwan Semiconductor Company, Ltd]

Homepage	http://www.taiwansemi.com

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1 / 4 page

CREAT BY ART

FEATURES

- Glass passivated chip junction

- Ideal for automated placement

- Low forward voltage drop

- High surge current capability

- Moisture sensitivity level: level 1, per J-STD-020

- Halogen-free according to IEC 61249-2-21 definition

- AEC-Q101 qualified

MECHANICAL DATA

Case:

DO-214AA (SMB)

Molding compound, UL flammability classification rating 94V-0

Packing code with suffix "G" means green compound (halogen-free)

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 2 whisker test

Polarity:

Indicated by cathode band

Weight:

0.09 g (approximately)

VRRM

V

VRMS

V

VDC

V

IF(AV)

A

TJ=25°C

TJ=125°C

TJ=25°C

TJ=125°C

TJ=25°C

TJ=125°C

CJ

pF

RθJL

RθJA

TJ

°C

TSTG

°C

Note 1: Pulse test with PW=300μs, 1% duty cycle

Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

Document Number: DS_D1411017

Version: A14

°C/W

13

47

10

250

Maximum reverse current @ rated VR

40

- 55 to +150

Typical thermal resistance

Peak forward surge current, 1 ms single half

sine-wave superimposed on rated load

200

150

540

290

1.1

400

600

800

1000

600

800

1000

S5

MB

400

280

420

560

700

S5GB thru S5MB

Surface Mount Glass Passivated Rectifiers

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

DO-214AA (SMB)

Unit

A

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

S5

GB

Maximum instantaneous forward voltage (Note 1)

@ 5 A

VF

Maximum average forward rectified current

IFSM

5

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

S5

JB

S5

KB

Storage temperature range

Operating junction temperature range

- 55 to +150

Taiwan Semiconductor

Typical junction capacitance (Note 2)

V

IR

μA

PARAMETER

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