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MMBT3904LP Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte MMBT3904LP
Spiegazioni elettronici  40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006
PDF  7 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

MMBT3904LP Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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MMBT3904LP
Document number: DS31835 Rev. 5 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3904LP
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
200
mA
Peak Collector Current
ICM
200
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
400
mW
(Note 6)
1000
Thermal Resistance, Junction to Ambient
(Note 5)
RJA
310
C/W
(Note 6)
120
Thermal Resistance, Junction to Lead
(Note 7)
RJL
120
°C/W
Operating and Storage and Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 8)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
200
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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