APG2C1-365-R4 datasheet(1/4 Pages) ROITHNER

Il numero della parte	APG2C1-365-R4

Spiegazioni elettronici	High Power Single Chip LED

PDF	4 Pages

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Produttore elettronici	ROITHNER [Roithner LaserTechnik GmbH]

Homepage	http://www.roithner-laser.com

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29.04.2015

APG2C1-365-r4

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APG2C1-365-r4

High Power Single Chip LED

APG2C1-365-r4 is a InGaN based, high power 365 nm single chip LED in standard emitter package for general

application.

Specifications

•

Structure: InGaN

•

Peak Wavelength: 365 nm

•

Optical Output Power: typ. 270 mW

• Life Time: > 10.000 hours

•

Lead free product - RoHS compliant

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Value

Unit

Power Dissipation, DC

PD

1000

mW

Forward Current, DC

IF

500

mA

Pulsed Current (1% duty cycle, 1kHz)

IFP

1000

mA

Reverse Voltage

UR

-5

V

Operating Temperature

Topr

-30 … +70

°C

Storage Temperature

Tstg

-30 … +85

°C

Soldering Temperature (max. 1,5 s)

Tsol

330

°C

Electro-Optical Characteristics (Ta=25°C)

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

Forward Current

IF

-

350

-

mA

Viewing Angle

φ

IF = 350 mA

-

±

75

-

deg.

CW Output Power

PO

IF = 350 mA

-

270

-

mW

Peak Wavelength

λ

P

IF = 350 mA

-

365

-

nm

Forward Voltage

UF

IF = 350 mA

-

3.5

4.2

V

Half Width (FWHM)

Δλ

IF = 350 mA

-

12

20

nm

Wavelength measurements tolerance is +/- 2%

Output power measurement tolerance is +/- 10%

Voltage measurement tolerance is +/- 2%

Device Materials

Item

Material

Foundation

Plastic

Lens

Silicone resin

Electrodes

AgCu

Heat Sink

AgCu

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