MMBD301L datasheet(1/2 Pages) LRC

Il numero della parte	MMBD301L

Spiegazioni elettronici	Silicon Hot-Carrier Diodes Schottky Barrier Diodes

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	LRC [Leshan Radio Company]

Homepage	http://www.lrc.cn/

Logo

1 / 2 page

LESHAN RADIO COMPANY, LTD.

G16–1/2

MAXIMUM RATINGS(TJ=125°C unless otherwise noted)

MBD301

MMBD301LT1

Rating

symbol

value

unit

Reverse Voltage

V R

30

Volts

Forward Power Dissipation

P F

@TA=25 °C

280

200

mW

Derate above 25 °C

2.8

2.0

mW/ °C

Operating Junction

T J

°C

Temperature Range

–55 to +125

Storage Temperature Range

T stg

–55 to +150

°C

DEVICE MARKING

MMBD301LT1=4T

ELECTRICAL CHARACTERISTICS(TA=25 °C unless otherwise noted)

Characteristic

Symbol

Min

Typ

M a x

Unit

Reverse Breakdown Voltage(IR=10

µA)

V (BR)R

30

—

Volts

Total Capacitance(VR=15V,f=1.0MHz,)Figure1

C T

—

0.9

1.5

pF

Reverse Leakage(VR=25V)Figure3

I R

—

13

200

nAdc

Forward Voltage(IF=1.0mAdc)Figure4

V F

—

0.38

0.45

Vdc

Forward Voltage(IF=10mAdc)Figure4

V F

—

0.52

0.6

Vdc

NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk.

Silicon Hot–Carrier Diodes

Schottky Barrier Diodes

3

CATHODE

1

ANODE

These devices are designed primarily for high–efficiency UHF and VHF detector

applications.They are readily adaptable to many other fast switching RF and digital

applications.They are supplied in an inexpensive plastic package for low–cost,

high–volume consumer and industrial/commercial requirements.They are also

available in a Surface Mount package.

•

EXtremely Low Minority Carrier Lifetime –15ps(Typ)

•

very Low Capacitance –1.5pF(Max)@VR=15V

•

CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

1

3

2

CASE

318–08, STYLE 6

SOT– 23

(TO–236AB)

MMBD301LT1

30 VOLTS

SILICON HOT–CARRIER

DETECTOR AND SWITCHING

DIODES

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