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STP35N10 Scheda tecnica(PDF) 2 Page - SamHop Microelectronics Corp.

Il numero della parte STP35N10
Spiegazioni elettronici  Super high dense cell design for extremely low RDS(ON).
PDF  8 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP35N10 Scheda tecnica(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
1.5
V
30
gFS
12
S
VSD
CISS
1490
pF
COSS
155
pF
CRSS
100
pF
Qg
36
nC
41
nC
Qgs
39
nC
Qgd
22
tD(ON)
19
ns
tr
2.6
ns
tD(OFF)
10
ns
tf
ns
Gate-Drain Charge
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off DelayTime
VDS=50V,ID=17.5A,VGS=10V
Fall Time
Turn-On DelayTime
m ohm
VGS=10V , ID=17.5A
VDS=10V , ID=17.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3.5
36
b
f=1.0MHz
b
VDS=50V,ID=17.5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=5A
1.3
V
Notes
www.samhop.com.tw
2
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
Apr,22,2014
STP35N10
Ver 1.1
2.5
0.8



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