WFF4N60 datasheet(4/6 Pages) WISDOM

4 / 6 page

HIGH VOLTAGE

N-Channel MOSFET

Rev.A0,August , 2010 |

Typical Characteristics (Continued)

-2

-1

100 ms

µs

10 ms

1 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

C = 25

2. T

J = 150

3. Single Pulse

, Drain-Source Voltage [V]

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Figure 9-2. Maximum Safe Operating Area

for WFF4N60

100

125

150

C, Case Temperature [

℃]

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1. V

GS = 0 V

2. I

D = 250

μ A

J, Junction Temperature [

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 2.25 A

J, Junction Temperature [

-5

-4

-3

-2

-1

-2

-1

※ No te s :

1 . Z

( t ) = 3. 79 ℃ /W M a x .

2 . D u ty F a c t o r , D = t

1 /t 2

3 . T

- T

= P

* Z

(t )

s i ngle p u ls e

D= 0 . 5

0. 0 2

0. 2

0. 0 5

0. 1

0. 0 1

1 , S q u a r e

W a v e P u ls e D u r a tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for WFF4N60

PDM

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