CS39-4B datasheet(1/2 Pages) CENTRAL

Il numero della parte	CS39-4B

Spiegazioni elettronici	SILICON CONTROLLED RECTIFIER

PDF	2 Pages

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Produttore elettronici	CENTRAL [Central Semiconductor Corp]

Homepage	http://www.centralsemi.com

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CS39-4B

CS39-4D

CS39-4M

CS39-4N

SILICON CONTROLLED RECTIFIER

4 AMP, 200 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS39-4B series

types are hermetically sealed silicon controlled

rectifiers designed for sensing circuit applications and

control systems.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

CS39

SYMBOL

-4B

-4D

-4M

-4N

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM 200

400

600

800

V

RMS On-State Current (TC=90°C)

IT(RMS)

4.0

A

Peak One Cycle Surge Current (t=10ms)

ITSM

35

A

I2t Value for Fusing (t=10ms)

I2t

4.5

A2s

Peak Gate Power Dissipation (tp=10μs)

PGM

3.0

W

Average Gate Power Dissipation

PG(AV)

0.2

W

Peak Gate Current (tp=10μs)

IGM

1.2

A

Operating Junction Temperature

TJ

-40 to +125

°C

Storage Temperature

Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

180

°C/W

Thermal Resistance

ΘJC

10

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ

5.0

μA

IDRM, IRRM Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C

200

μA

IGT

VD=12V, RL=10Ω

38

200

μA

IH

IT=50mA, RGK=1.0KΩ

0.25

5.0

mA

VGT

VD=12V, RL=10Ω

0.55

0.8

V

VGD

VD=300V, RGK=1.0KΩ, TC=125°C

0.2

V

VTM

IT=8.0A, tp=380μs

1.6

1.95

V

dv/dt

VD=⅔VDRM, RGK=1.0KΩ, TC=125°C

10

V/μs

TO-39 CASE

R3 (19-September 2012)

www.centr a lsemi.com

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