JDV2S41FS

2009-06-02

1

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

JDV2S41FS

VCO for V/UHF Band Radio

• Useful for small size tuner.

Characteristics

Symbol

Rating

Unit

Reverse voltage

15

V

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Reverse voltage

15

⎯

⎯

V

Reverse current

⎯

⎯

3

nA

Capacitance

14

⎯

16

pF

Capacitance

5.5

⎯

6.5

pF

Capacitance ratio

⎯

2.0

2.5

⎯

⎯

Series resistance

⎯

0.2

0.4

Ω

Marking

Equivalent Circuit (top view)

Unit: mm

fSC

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.6 mg (typ.)

0.2

0.1±0.05

0.6±0.05

A

0.48+0.02

-0.03

±0.05

A

M

0.07