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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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KTC3198 Scheda tecnica(PDF) 1 Page - KEC(Korea Electronics) |
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KTC3198 Scheda tecnica(HTML) 1 Page - KEC(Korea Electronics) |
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1 / 3 page  2013. 7. 08 1/3 SEMICONDUCTOR TECHNICAL DATA KTC3198 EPITAXIAL PLANAR NPN TRANSISTOR Revision No : 3 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent h FE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise : NF=1dB(Typ.). at f=1kHz. ・Complementary to KTA1266. MAXIMUM RATING (Ta=25 ℃) ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Note : hFE(1) Classification O:70～140, Y:120 ～240, GR:200～400, BL:300~700 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 50 mA Collector Power Dissipation *PC 625 mW 400 Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ～150 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA DC Current Gain hFE(1) (Note) VCE=6V, IC=2mA 70 - 700 hFE(2) VCE=6V, IC=150mA 25 100 - Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1.0 V Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Base Intrinsic Resistance rbb’ VCB=10V, IE=1mA, f=30MHz - 50 - Ω Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW |
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