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MPS8050SC Scheda tecnica(PDF) 1 Page - KEC(Korea Electronics)

Il numero della parte MPS8050SC
Spiegazioni elettronici  EPITAXIAL PLANAR NPN TRANSISTOR
PDF  2 Pages
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Produttore elettronici  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

MPS8050SC Scheda tecnica(HTML) 1 Page - KEC(Korea Electronics)

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2015. 5. 12
1/2
SEMICONDUCTOR
TECHNICAL DATA
MPS8050SC
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
HIGH CURRENT APPLICATION.
FEATURE
・Complementary to MPS8550SC.
MAXIMUM RATING (Ta=25
℃)
ELECTRICAL CHARACTERISTICS (Ta=25
℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1,200
mA
Collector Power Dissipation
PC *
350
mW
Junction Temperature
Tj
150
℃
Storage Temperature Range
Tstg
-55
～150
℃
* PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC=0.5mA, IE=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
25
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE=0.1mA, IC=0
5
-
-
V
Collector Cut-off Current
ICBO
VCB=35V, IE=0
-
-
0.1
uA
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
0.1
uA
DC Current Gain
hFE
VCE=1V, IC=100mA
200
-
300
Collector-Emitter Saturation Voltage
VCE(sat)
IC=800mA, IB=80mA
-
-
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=800mA, IB=80mA
-
-
1.2
V
Transition Frequency
fT
VCE=6V, IC=20mA, f=30MHz
150
-
-
MHz


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