IRFP4468PBF. datasheet(2/8 Pages) IRF

2 / 8 page

IRFP4468PbF

www.irf.com

Notes:

Calculated continuous current based on maximum allowable junction

temperature. Bond wire current limit is 195A. Note that current

limitations arising from heating of the device leads may occur with

some lead mounting arrangements.

(Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.045mH

RG = 25Ω, IAS = 180A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 180A, di/dt ≤ 600A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

–––

0.09

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.0

2.6

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

μA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Internal Gate Resistance

–––

0.8

–––

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

310

–––

Total Gate Charge

–––

360

540

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

270

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

230

–––

td(off)

Turn-Off Delay Time

–––

160

–––

Fall Time

–––

260

–––

Ciss

Input Capacitance

––– 19860 –––

Coss

Output Capacitance

–––

1360

–––

Crss

Reverse Transfer Capacitance

–––

540

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 1550 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)h –––

900

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

–––

––– 290c

(Body Diode)

ISM

Pulsed Source Current

–––

1120

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

100

TJ = 25°C

VR = 85V,

–––

110

TJ = 125°C

IF = 180A

Qrr

Reverse Recovery Charge

–––

370

nC TJ = 25°C

di/dt = 100A/μs

–––

420

TJ = 125°C

IRRM

Reverse Recovery Current

–––

6.9

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

ID = 180A

RG = 2.7Ω

VGS = 10V

VDD = 65V

ID = 180A, VDS =0V, VGS = 10V

TJ = 25°C, IS = 180A, VGS = 0V

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 180A

VDS = VGS, ID = 250μA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

MOSFET symbol

showing the

VDS =50V

Conditions

VGS = 10V

VGS = 0V

VDS = 50V

ƒ = 100 kHz, See Fig. 5

VGS = 0V, VDS = 0V to 80V

i, See Fig. 11

VGS = 0V, VDS = 0V to 80V

Conditions

VDS = 50V, ID = 180A

ID = 180A

VGS = 20V

VGS = -20V

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