2

Symbol

Parameter

Units

Absolute Max.

Device Voltage, RF output to ground (T = 25°C)

V

6

CW RF Input Power

dBm

20

mW

560

°C/W

110

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device in excess of any

of these limits may cause permanent

damage.

2. Thermal resistance measured using 150°C

Liquid Crystal Measurement method.

3. Case temperature Tc at 25°C. Derate at

9.1mW/°C for Tc > 87.5°C.

Figure 1. S21 Distribution.

100

80

60

40

20

0

S21 (dB)

21.8

22.2

23

23.4

22.6

23.8

Figure 2. P1dB Distribution.

80

60

40

20

0

P1dB (dBm)

15.3

15.6

16.2

16.5

15.9

16.8

Figure 3. Noise Figure Distribution.

120

100

80

60

40

20

0

NF (dB)

3.6

4

4.4

4.8

5.2

Figure 4. OIP3 Distribution.

80

60

40

20

0

OIP3 (dBm)

26.5

27

28

28.5

27.5

29

Note:

1. Measured on the production test circuit base on 500 samples.

Figure 5. Test circuit at of the 2 GHz production test board used for NF, Gain and OIP3

measurements. Circuit losses have been de-embedded from actual measurements.

RF Output

RF Input

Vcc

RFC

33 nH

1 nF

1 nF

100 pF

1000 pF