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MGA-68563 Scheda tecnica(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED

Il numero della parte MGA-68563
Spiegazioni elettronici  Current-Adjustable, Low Noise Amplifier
PDF  18 Pages
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Produttore elettronici  AVAGO [AVAGO TECHNOLOGIES LIMITED]
Homepage  http://www.avagotech.com
Logo AVAGO - AVAGO TECHNOLOGIES LIMITED

MGA-68563 Scheda tecnica(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED

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2
Wire Supplying
Vbias from
Agilent 4142
Direct to
Ground
Direct to
Ground
RF
Input
Blocking
Cap
Bias
RF Output
Reference
Planes
Bias
Tee
Vdd supply from
Agilent 4142
Figure 1b. A diagram showing the connection to the DUT during an S and
Noise parameter measurement using an automated tuner system.
Note:
Package marking
provides orientation
and identification:
“6C” = Device Code
“x” = Date code
indicates the month
of
manufac-
ture.
OUTPUT
and Vd
GND
GND
GND
INPUT
1
2
3
6
5
4 BIAS
Feedback
Id = Ids + Ibias
Ibias
Ids
Vd
Bias
1, 2, 5
4
3
Rbias
Vbias
Input
match
6
RFin
GND
RFout
Simplified Schematic
Pin Connections and Package Marking
Figure 1a. Test circuit of the 0.5 GHz production test board used for NF, Gain
and OIP3 measurements. This circuit achieves a trade-off between optimal
NF, Gain, OIP3 and input return loss. Circuit losses have been de-embedded
from actual measurements.
+
6.8 nH
100 pF
3
1 25
6
4
100 pF
MGA-68563
47 nH
68 pF
10 nF
3V
4300
Ω
MGA-68563 Absolute Maximum Ratings[1]
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Bias is assumed at DC quiescent conditions.
3. With the DC (typical bias) and RF applied to
the device at board temperature TB = 25°C.
4. Total dissipation power is referred to lead
“5” temperature. Tc=92°C, derate Pdiss at
10.3mW/°C for Tc>92°C.
5. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Symbol
Parameter
Units
Absolute
Maximum
Vd
Device Voltage (pin 6) [2]
V6
Id
Device Current (pin 6) [2]
mA
100
Pin
CW RF Input (pin3)
(Vd=3V, Id=10mA) [3]
(Vd=0V, Id=0mA)
dBm
dBm
21
21
Iref
Bias Reference Current (pin 4)
mA
1
Pdiss
Total Power Dissipation [4]
mW
600
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
150
θch_b
Thermal Resistance [5]
°C/W
97



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